LOGO
LOGO
IPD80R1K4CEATMA1 Image

img for reference only

Mfr. #:
IPD80R1K4CEATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
20
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 800V
Continuous Drain Current (Id) 3.9A
Power (Pd) 63W
On-resistance (RDS(on)@Vgs,Id) 1.4Ω@2.3A,10V
Threshold Voltage (Vgs(th)@Id) 3.9V@240uA
Gate Charge (Qg@Vgs) 23nC@10V
Input Capacitance (Ciss@Vds) 570pF@100V
Operating Temperature -55℃~ 150℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd