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IPB200N25N3GATMA1 Image

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Mfr. #:
IPB200N25N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
729
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 250V
Continuous Drain Current (Id) 64A
Power (Pd) 300W
On-resistance (RDS(on)@Vgs,Id) 20mΩ@64A,10V
Threshold Voltage (Vgs(th)@Id) 4V@270uA
Gate Charge (Qg@Vgs) 86nC@10V
Input Capacitance (Ciss@Vds) 7.1nF@100V
Operating Temperature -55℃~ 175℃@(Tj)
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