LOGO
LOGO
IPB020N10N5ATMA1 Image

img for reference only

Mfr. #:
IPB020N10N5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 120A
Power (Pd) 375W
On-resistance (RDS(on)@Vgs,Id) 2mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 3.8V@270uA
Gate Charge (Qg@Vgs) 210nC@10V
Input Capacitance (Ciss@Vds) 15.6nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd