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IPB60R099P7ATMA1 Image

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Mfr. #:
IPB60R099P7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 650V
Continuous Drain Current (Id) 31A
Power (Pd) 117W
On-resistance (RDS(on)@Vgs,Id) 99mΩ@10.5A,10V
Threshold Voltage (Vgs(th)@Id) 4V@530uA
Gate Charge (Qg@Vgs) 45nC@10V
Input Capacitance (Ciss@Vds) 1.952nF@400V
Operating Temperature -55℃~ 150℃@(Tj)
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