LOGO
LOGO
IPB039N10N3GATMA1 Image

img for reference only

Mfr. #:
IPB039N10N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
33
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 160A
Power (Pd) 214W
On-resistance (RDS(on)@Vgs,Id) 3.9mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 3.5V@160uA
Gate Charge (Qg@Vgs) 117nC@10V
Input Capacitance (Ciss@Vds) 8.41nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd