LOGO
LOGO
IPB038N12N3GATMA1 Image

img for reference only

Mfr. #:
IPB038N12N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
75
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 120V
Continuous Drain Current (Id) 120A
Power (Pd) 300W
On-resistance (RDS(on)@Vgs,Id) 3.8mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 4V@270uA
Gate Charge (Qg@Vgs) 211nC@10V
Input Capacitance (Ciss@Vds) 13.8nF@60V
Operating Temperature -55℃~ 175℃@(Tj)
Related models
  • 2ED2304S06FXLLA1

    Half-bridge Gate Driver IC CMOS PG-DSO-8-910

  • IR2235JTRPBF

    Half-Bridge Gate Driver IC Inverting 44-PLCC, 32 Leads (16.58x16.58)

  • 1EDN7116GXTMA1

    High-side or low-side gate driver IC Non-inverting PG-VSON-10-4

  • IR21531DPBF

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

  • IR4427PBF

    Low Side Gate Driver IC Non-Inverting 8-PDIP

  • 1EDN7146GXTMA1

    High-side or low-side gate driver IC Non-inverting PG-VSON-10-4

  • IR2302SPBF

    Half-bridge Gate Driver IC Non-Inverting 8-SOIC

  • IR21531PBF

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd