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IPB19DP10NMATMA1 Image

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Mfr. #:
IPB19DP10NMATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
999
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 13.8A; 2.9A
Power (Pd) 83W; 3.8W
On-resistance (RDS(on)@Vgs,Id) 185mΩ@12A,10V
Threshold Voltage (Vgs(th)@Id) 4V@1.04mA
Gate Charge (Qg@Vgs) 45nC@10V
Input Capacitance (Ciss@Vds) 2nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
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