IPP65R280E6XKSA1 Infineon | Infineon agency

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Mfr. #：

IPP65R280E6XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 13.8A (Tc) 104W (Tc) PG-TO220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	13.8 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	280 mOhm @ 4.4 A, 10 V
Vgs(th) (max) at Id	3.5 V @ 440 μA
Gate Charge?(Qg) (max) at Vgs	45 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	950 pF @ 100 V
FET Function	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package/Case	TO-220-3

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