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BSZ086P03NS3E G Image

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Mfr. #:
BSZ086P03NS3E G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P Channel
Drain Source Voltage (Vdss) 30V
Continuous Drain Current (Id) 40A
Power (Pd) 69W
On-resistance (RDS(on)@Vgs,Id) 6.5mΩ@10V,20A
Threshold Voltage (Vgs(th)@Id) 2.5V@105uA
Gate Charge (Qg@Vgs) 43.2nC@0~10V
Input Capacitance (Ciss@Vds) 3.19nF@15V
Reverse Transfer Capacitance (Crss@Vds) 110pF@15V
Operating Temperature -55℃~ 150℃@(Tj)
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