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F411MR12W2M1B76BOMA1 Image

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Mfr. #:
F411MR12W2M1B76BOMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 4 N-channel (half bridge)
Drain Source Voltage (Vdss) 1.2kV
Continuous Drain Current (Id) 100A
On-resistance (RDS(on)@Vgs,Id) 11.3mΩ@100A,15V
Threshold Voltage (Vgs(th)@Id) 5.55V@40mA
Gate Charge (Qg@Vgs) 248nC@15V
Input Capacitance (Ciss@Vds) 7.36nF@800V
Operating Temperature -40℃~ 150℃@(Tj)
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