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IRFHM830DTRPBF Image

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Mfr. #:
IRFHM830DTRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 30 V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) PQFN (3x3)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 20A (Ta), 40A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 4.3 mOhm @ 20A, 10V
Vgs(th) (max) at Id 2.35V @ 50μA
Gate Charge?(Qg) (max) at Vgs 27 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1797 pF @ 25 V
FET function -
Power dissipation (max) 2.8W (Ta), 37W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PQFN (3x3)
Package/case 8-VQFN Exposed pad
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