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IPTG111N20NM3FDATMA1 Image

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Mfr. #:
IPTG111N20NM3FDATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
150
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain-Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 108A; 10.8A
Power (Pd) 375W; 3.8W
On-resistance (RDS(on)@Vgs,Id) 11.1mΩ@96A,10V
Threshold Voltage (Vgs(th)@Id) 4V@267uA
Gate Charge (Qg@Vgs) 81nC@10V
Input Capacitance (Ciss@Vds) 7nF@100V
Operating Temperature -55℃~ 175℃@(Tj)
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