IRF3707ZCSTRRP Infineon | Infineon agency

img for reference only

Mfr. #：

IRF3707ZCSTRRP

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 30 V 59A (Tc) 57W (Tc) D2PAK

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	59A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) at Different Id, Vgs	9.5 milliohms @ 21A, 10V
Vgs(th) (Max) at Different Id	2.25V @ 25μA
Gate Charge?(Qg) (Max) at Different Vgs	15 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1210 pF @ 15 V
FET function	-
Power dissipation (max)	57W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	D2PAK
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

DD175N32K

Module: diode; two in series; 3.2kV; If: 175A; BG-PB50-1; Ufmax: 2.05V; Ifsm: 4.5kA
DD175N34K

Module: diode; two in series; 3.4kV; If: 175A; BG-PB50-1; Ufmax: 2.05V; Ifsm: 4.5kA
DD180N16SHPSA1

Module: diode; two in series; 1.6kV; If: 226A; BG-PB34SB-1; Ufmax: 1.39V; screw; thread
DD540N26K

Module: diode; two in series; 2.6kV; If: 540A; BG-PB60AT-1; Ufmax: 1.48V; screw; thread
DD180N20SHPSA1

Module: diode; two in series; 2kV; If: 226A; BG-PB34SB-1; Ufmax: 1.39V; Ifsm: 5.75kA
DD180N22SHPSA1

Module: diode; two in series; 2.2kV; If: 226A; BG-PB34SB-1; Ufmax: 1.39V; screw; thread
DD231N22K

Module: diode; two in series; 2.2kV; If: 231A; BG-PB50-1; Ufmax: 1.55V; Ifsm: 7.5kA
DD231N26K

Module: diode; two in series; 2.6kV; If: 231A; BG-PB50-1; Ufmax: 1.55V; Ifsm: 7.5kA