LOGO
LOGO
IRFH8316TRPBF-IR Image

img for reference only

Mfr. #:
IRFH8316TRPBF-IR
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 30V
Continuous Drain Current (Id) 27A; 50A
Power (Pd) 3.6W; 59W
On-resistance (RDS(on)@Vgs,Id) 2.95mΩ@20A,10V
Threshold Voltage (Vgs(th)@Id) 2.2V@50uA
Gate Charge (Qg@Vgs) 59nC@10V
Input Capacitance (Ciss@Vds) 3.61nF@10V
Operating Temperature -55℃~ 150℃@(Tj)
Related models
  • IPS60R1K0PFD7SAKMA1

    Through Hole N Channel 650 V 4.7A (Tc) 26W (Tc) PG-TO251-3

  • IPAN70R750P7SXKSA1

    Through hole N channel 700 V 6.5A (Tc) 20.8W (Tc) PG-TO220-FP

  • IFS150B12N3E4PB11BPSA1

    IGBT Module Trench Field Stop Full Bridge 1200 V 300 A 750 W Base Mount Module

  • IPA60R650CEXKSA1

    Through hole N channel 600 V 7A (Tc) 28W (Tc) PG-TO220-FP

  • IRL40B215

    Through hole N channel 40 V 120A (Tc) 143W (Tc) TO-220AB

  • FF450R12ME4EB11BPSA2

    IGBT Module Trench Field Stop Half Bridge Inverter 1200 V 450 A 20 mW Chassis Mount AG-ECONOD-6

  • FF300R12KT3EHOSA1

    IGBT Modules 2 Standalone 1200 V 480 A 1450 W Base Mount Modules

  • AUIRFR6215

    Surface Mount Type P Channel 150 V 13A (Tc) 110W (Tc) D-Pak

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd