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IPG20N10S4L22ATMA1 Image

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Mfr. #:
IPG20N10S4L22ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
3
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 2 N-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 20A
On-Resistance (RDS(on)@Vgs,Id) 22mΩ@17A,10V
Threshold Voltage (Vgs(th)@Id) 2.1V@25uA
Gate Charge (Qg@Vgs) 27nC@10V
Input Capacitance (Ciss@Vds) 1.755nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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