LOGO
LOGO
BSG0810NDIATMA1 Image

img for reference only

Mfr. #:
BSG0810NDIATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
10
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 2 N-channel (paired)
Drain-Source Voltage (Vdss) 25V
Continuous Drain Current (Id) 39A; 19A
On-Resistance (RDS(on)@Vgs,Id) 3mΩ@20A,10V
Threshold Voltage (Vgs(th)@Id) 2V@250uA
Gate Charge (Qg@Vgs) 8.4nC@4.5V
Input Capacitance (Ciss@Vds) 1.04nF@12V
Operating Temperature -55℃~ 155℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd