LOGO
LOGO
BSC007N04LS6 Image

img for reference only

Mfr. #:
BSC007N04LS6
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
112984
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 100A
Power (Pd) 188W
On-resistance (RDS(on)@Vgs,Id) 0.7mΩ@10V,50A
Threshold Voltage (Vgs(th)@Id) 2.3V@250uA
Related models
  • IKW50N65EH5XKSA1

    IGBT Transistor INDUSTRY 14 Information about Infineon Technologies infineon trenchstop5 h5 igbts

  • IGW75N60TFKSA1

    IGBT Transistor LOW LOSS IGBT TECH 600V 75A Information about Infineon Technologies infineon murata powering igbt

  • IGP30N60H3

    IGBT Transistor 600V 30A 187W Information about Infineon Technologies infineon murata powering igbt

  • IGB20N60H3

    IGBT Transistor 600v Hi-Speed ​​SW IGBT

  • AIKB30N65DH5ATMA1

    IGBT transistors DISCRETE SWITCHES Information about Infineon Technologies infineon trenchstop5 h5 igbts

  • IHW25N140R5LXKSA1

    IGBT Transistor HOME APPLIANCES 14

  • AUIRGDC0250AKMA1

    IGBT transistorsDISCRETE SWITCHES

  • F3L600R10W3S7B11BPSA1

    IGBT Transistor EASY STANDARD PLUS

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd