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IPD26N06S2L35ATMA2 Image

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Mfr. #:
IPD26N06S2L35ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
20
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 55V
Continuous Drain Current (Id) 30A
Power (Pd) 68W
On-resistance (RDS(on)@Vgs,Id) 35mΩ@13A,10V
Threshold Voltage (Vgs(th)@Id) 2V@26uA
Gate Charge (Qg@Vgs) 24nC@10V
Input Capacitance (Ciss@Vds) 621pF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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