IRF6668TR1 Infineon | Infineon agency

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Mfr. #：

IRF6668TR1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 80 V 55A (Tc) 2.8W (Ta), 89W (Tc) DIRECTFET? MZ

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	55A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	15 milliohms @ 12A, 10V
Vgs(th) (max) at Id	4.9V @ 100μA
Gate Charge?(Qg) (max) at Vgs	31 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	1320 pF @ 25 V
FET Function	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET? MZ
Package/Case	DirectFET? Isocapacitive MZ

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