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IRF6709S2TRPBF Image

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Mfr. #:
IRF6709S2TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 25 V 12A (Ta), 39A (Tc) 1.8W (Ta), 21W (Tc) DirectFET? Isocapacitive S1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 12A (Ta), 39A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) @ Id, Vgs 7.8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Gate Charge?(Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1010 pF @ 13 V
FET function -
Power dissipation (max) 1.8W (Ta), 21W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package DirectFET? Isocapacitive S1
Package/case DirectFET? Isocapacitive S1
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