LOGO
LOGO
IPB100N06S2L05ATMA2 Image

img for reference only

Mfr. #:
IPB100N06S2L05ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 55V
Continuous Drain Current (Id) 100A
Power (Pd) 300W
On-resistance (RDS(on)@Vgs,Id) 4.4mΩ@80A,10V
Threshold Voltage (Vgs(th)@Id) 2V@250uA
Gate Charge (Qg@Vgs) 230nC@10V
Input Capacitance (Ciss@Vds) 5.66nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd