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SPB21N50C3ATMA1 Image

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Mfr. #:
SPB21N50C3ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 560V
Continuous Drain Current (Id) 21A
Power (Pd) 208W
On-resistance (RDS(on)@Vgs,Id) 190mΩ@13.1A,10V
Threshold Voltage (Vgs(th)@Id) 3.9V@1mA
Gate Charge (Qg@Vgs) 95nC@10V
Input Capacitance (Ciss@Vds) 2.4nF@25V
Operating Temperature -55℃~ 150℃@(Tj)
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