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BSZ086P03NS3GATMA1 Image

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Mfr. #:
BSZ086P03NS3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain-Source Voltage (Vdss) 30V
Continuous Drain Current (Id) 40A; 13.5A
Power (Pd) 2.1W; 69W
On-resistance (RDS(on)@Vgs,Id) 8.6mΩ@20A,10V
Threshold Voltage (Vgs(th)@Id) 3.1V@105uA
Gate Charge (Qg@Vgs) 57.5nC@10V
Input Capacitance (Ciss@Vds) 4.785nF@15V
Operating Temperature -55℃~ 150℃@(Tj)
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