IRF6644 Infineon | Infineon agency

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Mfr. #：

IRF6644

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) DIRECTFET? MN

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	10.3A (Ta), 60A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	13 mOhm @ 10.3A, 10V
Vgs(th) (max) at Id	4.8V @ 150μA
Gate Charge?(Qg) (max) at Vgs	47 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	2210 pF @ 25 V
FET function	-
Power dissipation (max)	2.8W (Ta), 89W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	DIRECTFET? MN
Package/case	DirectFET? Isocapacitive MN

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