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IPD110N12N3GBUMA1 Image

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Mfr. #:
IPD110N12N3GBUMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 120 V 75A (Tc) 136W (Tc) PG-TO252-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 75 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 11 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id 4 V @ 83 μA
Gate Charge?(Qg) (max) at Vgs 65 ​​nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 4310 pF @ 60 V
FET Function -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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