IRF6798MTR1PBF Infineon | Infineon agency

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Mfr. #：

IRF6798MTR1PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 25 V 37A (Ta), 197A (Tc) 2.8W (Ta), 78W (Tc) DIRECTFET? MX

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	37A (Ta), 197A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) @ Id, Vgs	1.3 milliohms @ 37A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Gate Charge?(Qg) (Max) @ Vgs	75 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	6560 pF @ 13 V
FET function	Schottky diode (body)
Power dissipation (max)	2.8W (Ta), 78W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	DIRECTFET? MX
Package/case	DirectFET? Isocapacitive MX

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