IRF7413ZGTRPBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRF7413ZGTRPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 30 V 13A (Ta) 2.5W (Ta) 8-SO

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	13A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	10 milliohms @ 13A, 10V
Vgs(th) (max) at Id	2.25V @ 25μA
Gate Charge?(Qg) (max) at Vgs	14 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1210 pF @ 15 V
FET function	-
Power dissipation (max)	2.5W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	8-SO
Package/case	8-SOIC (0.154", 3.90mm width)

IRFS4127TRLPBF

Infineon N-channel MOS tube, Vds=200 V, 72 A, TO-262, SMD mounting, IRFS4127TRLPBF
BSZ036NE2LSATMA1

Infineon N-channel MOS tube, Vds=25 V, 40 A, PG-TSDSON-8-FL, SMD installation
BSC014N06NSTATMA1

Infineon MOS tube, TDSON-8, SMD installation
SPD15P10PLGBTMA1

Infineon P-channel MOS tube, Vds=100 V, 15 A, PG-TO252-3, SMD installation, SPD15P10PLGBTMA1
IPD110N12N3GATMA1

Infineon N-Channel MOSFET, 75 A, PG-TO252-3
IPU95R750P7AKMA1

Infineon N-channel enhancement mode MOS tube, Vds=950 V, TO-251, through hole mounting, 3 pins
IPB80P04P4L04ATMA2

Infineon P-channel MOS tube, Vds=40 V, 80 A, PG-TO263-3-2, SMD installation, IPB80P04P4L04ATMA2
IRFH5007TRPBF

Infineon N-channel MOS tube, Vds=100 V, 1.6 A, PQFN 5mm x 6mm, through-hole mounting, IRFH5007TRPBF