LOGO
LOGO
SPB80P06PGATMA1 Image

img for reference only

Mfr. #:
SPB80P06PGATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO263-3
Datasheet:
In Stock:
691
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type P-MOSFET
Technology SIPMOS?
Polarization Unipolar
Drain-source voltage -60V
Drain current -80A
Power consumption 340W
Package PG-TO263-3
Gate-source voltage ±20V
On-state resistance 23mΩ
Mounting method SMD
Channel type Enhanced
Related models
  • FM25V20A-DGQ

    IC: FRAM memory; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8; Serial

  • FM25V20A-DGQTR

    IC: FRAM memory; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8; Serial

  • FM25V20A-DGTR

    IC: FRAM memory; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8; Serial

  • FM25V20A-G

    IC: FRAM memory; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8; Serial

  • FM25V20A-GTR

    IC: FRAM memory; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; SO8; Serial

  • FM25VN10-G

    IC: FRAM memory; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8; Serial

  • S25FL064LABMFI013

    IC: FLASH memory; 64Mb; SPI; 108MHz; 2.7÷3.6V; SO8; Serial

  • S25FL064LABNFI040

    IC: FLASH memory; 64Mb; SPI; 108MHz; 2.7÷3.6V; USON4; Serial

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd