IPS110N12N3GBKMA1 Infineon | Infineon agency

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Mfr. #：

IPS110N12N3GBKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 120 V 75A (Tc) 136W (Tc) PG-TO251-3-11

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	120 V
Current at 25°C - Continuous Drain (Id)	75 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	11 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id	4 V @ 83 μA
Gate Charge?(Qg) (max) at Vgs	65 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	4310 pF @ 60 V
FET Function	-
Power Dissipation (max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package/Case	TO-251-3 Stub Lead, IPak

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