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IRLB3813PBF Image

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Mfr. #:
IRLB3813PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Datasheet:
In Stock:
58
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology HEXFET?
Polarization Unipolar
Drain-source voltage 30V
Drain current 260A
Power consumption 230W
Package TO220AB
Gate-source voltage ±20V
On-state resistance 1.95mΩ
Mounting method THT
Gate charge 57nC
Package type Tube
Channel type Enhancement
Semiconductor device characteristics logic level
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