LOGO
LOGO
IRLB8314PBF Image

img for reference only

Mfr. #:
IRLB8314PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Datasheet:
In Stock:
41
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor Type N-MOSFET
Technology HEXFET?
Polarization Unipolar
Drain-Source Voltage 30V
Drain Current 120A
Pulsed Drain Current 664A
Power Consumption 125W
Package TO220AB
Gate-Source Voltage ±20V
On-State Resistance 2.4mΩ
Mounting Method THT
Channel Type Enhanced
Related models
  • TLE4997E2XALA1

    Board Mount Hall Effect / Magnetic Sensor HALL SENSOR 4.5-5.5V

  • TLV4906K

    Board Mount Hall Effect/Magnetic Sensor Value Opt Hall Eff SW Ind/Consumer App

  • TLE493DA2B6HTSA1

    Board Mount Hall Effect / Magnetic SensorsPOSITION SENSORS

  • TLE493DW2B6A3HTSA1

    Board Mount Hall Effect / Magnetic SensorsPOSITION SENSORS

  • TLE5501E0001XUMA1

    Board Mount Hall Effect / Magnetic SensorsPOSITION SENSORS

  • TLE4946-2L

    Board Mount Hall Effect / Magnetic SensorsHigh Precision Hall Effect Latch

  • TLE5012

    Board Mount Hall Effect / Magnetic SensorsMAGNE Angle Sensor

  • TLE4941

    Board Mount Hall Effect / Magnetic SensorsSmart Hall Effct Ics Actve Wheel Spd Sen

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd