IPB80N06S405ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB80N06S405ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 60 V 80A (Tc) 107W (Tc) PG-TO263-3-2

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	5.4 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	4 V @ 60 μA
Gate Charge?(Qg) (max) at Vgs	81 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	6500 pF @ 25 V
FET Function	-
Power Dissipation (max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

BSP149H6327XTSA1

Infineon, SIPMOS series, MOSFET, NMOS, SOT-223 package
IRLB3036PBF

Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package
IRFB7430PBF

Infineon, StrongIRFET series, MOSFET, NMOS, TO-220AB package
IPD80R1K0CEATMA1

Infineon, CoolMOS CE series, MOSFET, NMOS, DPAK (TO-252) package
IRFS7730TRLPBF

Infineon, HEXFET series, MOSFET, NMOS, D2PAK (TO-263) package
IRFB7730PBF

Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package
IRFS7730PBF

Infineon, HEXFET series, MOSFET, NMOS, D2PAK (TO-263) package
IRFR5305TRPBF

Infineon, HEXFET series, MOSFET, PMOS, DPAK (TO-252) package