LOGO
LOGO
IRF530NPBF Image

img for reference only

Mfr. #:
IRF530NPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Datasheet:
In Stock:
1440
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor Type N-MOSFET
Technology HEXFET?
Polarization Unipolar
Drain-Source Voltage 100V
Drain Current 17A
Power Consumption 79W
Package TO220AB
Gate-Source Voltage ±20V
On-State Resistance 90mΩ
Mounting Method THT
Gate Charge 24.7nC
Package Type Tube
Channel Type Enhancement
Related models
  • IRLH6224TRPBF

    Surface mount N-channel 20 V 28A (Ta), 105A (Tc) 3.6W (Ta), 52W (Tc) 8-PQFN (5x6)

  • BSZ0803LSATMA1

    Surface mount N channel 100 V 9A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) PG-TDSON-8 FL

  • IAUC60N10S5L110ATMA1

    Surface mount N channel 100 V 60A (Tc) 88W (Tc) PG-TDSON-8-33

  • IRFZ46NLPBF

    Through hole N channel 55 V 53A (Tc) 3.8W (Ta), 107W (Tc) TO-262

  • CY22381SXI-190T

    Clock Generator, Fanout Distribution IC 3 8-SOIC (0.154", 3.90mm Width)

  • CY22392ZXI-388

    IC 16-TSSOP (0.173", 4.40mm Width)

  • CY22393ZXC-529T

    IC 16-TSSOP (0.173", 4.40mm Width)

  • CY22393ZXC-MZ2

    IC 16-TSSOP (0.173", 4.40mm Width)

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd