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IPT020N10N3ATMA1 Image

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Mfr. #:
IPT020N10N3ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology OptiMOS? 3
Polarization Unipolar
Drain-source voltage 100V
Drain current 212A
Pulsed drain current 1200A
Power consumption 375W
Package PG-HSOF-8
Gate-source voltage ±20V
On-state resistance 2mΩ
Mounting method SMD
Gate charge 156nC
Packaging type Tape
Channel type Enhancement
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