LOGO
LOGO
IPI65R380C6XKSA1 Image

img for reference only

Mfr. #:
IPI65R380C6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolMOS?
Polarization Unipolar
Drain-source voltage 650V
Drain current 10.6A
Power consumption 83W
Package PG-TO262-3
Gate-source voltage ±20V
On-state resistance 0.38Ω
Mounting method THT
Channel type Enhanced
Related models
  • FZ500R65KE3NOSA1

    IGBT Module Half Bridge 6500 V 500 A 2000000 W Base Mount Module

  • FZ800R33KF2CNOSA1

    IGBT Module Half Bridge 3300 V 1300 A 9600 W Base Mount Module

  • FZ800R45KL3B5NOSA2

    IGBT Module Trench Field Stop Half Bridge 4500 V 1600 A 9000 W Base Mount Module

  • FF400R33KF2CNOSA1

    IGBT Modules 2 Standalone 3300 V 660 A 4800 W Base Mount Modules

  • FZ600R65KE3NOSA1

    IGBT Module Single Channel 6500 V 600 A 2400 W Base Mount Module

  • FZ1200R45HL3BPSA1

    IGBT Module Trench Type Field Stop Single Switch 4500 V 1200 A 15000 W Base Mount Module

  • FD800R45KL3KB5NPSA1

    IGBT Module Single Chopper 4500 V 800 A 9000 W Base Mount Module

  • FD500R65KE3KNOSA1

    IGBT Module Single Chopper 6500 V 500 A 9600 W Base Mount Module

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd