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IPN80R1K2P7ATMA1 Image

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Mfr. #:
IPN80R1K2P7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolMOS? P7
Polarization Unipolar
Drain-source voltage 800V
Drain current 3.1A
Power consumption 6.8W
Package PG-SOT223
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting method SMD
Gate charge 11nC
Package type Reel
Channel type Enhancement
Semiconductor device characteristics ESD protected gate
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