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IPG20N10S4L35ATMA1 Image

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Mfr. #:
IPG20N10S4L35ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET x2; OptiMOS? T2; unipolar; 100V; 17A; Idm: 80A
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET x2
Technology OptiMOS? T2
Polarization Unipolar
Drain-source voltage 100V
Drain current 17A
Pulsed drain current 80A
Power consumption 43W
Package PG-TDSON-8-4
Gate-source voltage ±16V
On-state resistance 35mΩ
Mounting method SMD
Channel type Enhanced
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