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IPD30N03S4L09ATMA1 Image

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Mfr. #:
IPD30N03S4L09ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; OptiMOS? T2; unipolar; 30V; 30A; 42W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology OptiMOS? T2
Polarization Unipolar
Drain-source voltage 30V
Drain current 30A
Power consumption 42W
Package PG-TO252-3
Gate-source voltage ±16V
On-state resistance 9mΩ
Mounting method SMD
Gate charge 15nC
Channel type Enhancement
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