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IPB47N10S33ATMA1 Image

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Mfr. #:
IPB47N10S33ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 47A (Tc) 175W (Tc) PG-TO263-3-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 47A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 33 mOhm @ 33A, 10V
Vgs(th) (max) at Id 4V @ 2mA
Gate Charge?(Qg) (max) at Vgs 105 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 2500 pF @ 25 V
FET Function -
Power Dissipation (max) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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