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IPB039N10N3GATMA1 Image

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Mfr. #:
IPB039N10N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology OptiMOS? 3
Polarization Unipolar
Drain-source voltage 100V
Drain current 160A
Power consumption 214W
Package PG-TO263-7
Gate-source voltage ±20V
On-state resistance 3.9mΩ
Mounting method SMD
Channel type Enhanced
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