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IPB180N04S4H0ATMA1 Image

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Mfr. #:
IPB180N04S4H0ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; OptiMOS? T2; unipolar; 40V; 180A; 250W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology OptiMOS? T2
Polarization Unipolar
Drain-source voltage 40V
Drain current 180A
Power consumption 250W
Package PG-TO263-7
Gate-source voltage ±20V
On-state resistance 1.1mΩ
Mounting method SMD
Gate charge 173nC
Channel type Enhancement
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