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IPB180N06S4H1ATMA2 Image

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Mfr. #:
IPB180N06S4H1ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 180A; Idm: 720A
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor Type N-MOSFET
Technology OptiMOS? -T2
Polarization Unipolar
Drain-Source Voltage 60V
Drain Current 180A
Pulsed Drain Current 720A
Power Consumption 250W
Package PG-TO263-7-3
Gate-Source Voltage ±20V
On-State Resistance 1.7mΩ
Mounting Method SMD
Channel Type Enhanced
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