IPS50R520CP Infineon | Infineon agency

img for reference only

Mfr. #：

IPS50R520CP

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Tongkou N channel 550 V 7.1A (TC) 66W (TC) PG-TO251-3-11

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	550 V
Current at 25°C - Continuous Drain (Id)	7.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	520 mOhm @ 3.8A, 10V
Vgs(th) (max) at Id	3.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	17 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	680 pF @ 100 V
FET Function	-
Power Dissipation (max)	66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package/Case	TO-251-3 Stub Leads, IPak

IAUC120N04S6N009ATMA1

Power MOSFET, N-channel, 40 V, 120 A, 750 μohm, TDSON, SMT
IRF3415PBF

Power MOSFET, N-Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole
IRLML2803TRPBF

Power MOSFET, N-Channel, 30 V, 850 mA, 0.3 ohm, SOT-23, Surface Mount
IPD90P03P4L04ATMA1

Power MOSFET, P-Channel, 30 V, 90 A, 0.0033 ohm, TO-252 (DPAK), Surface Mount
IPD60R380C6ATMA1

Power MOSFET, N-channel, 600 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface mount
IPD30N10S3L34ATMA1

Power MOSFET, N-Channel, 100 V, 30 A, 0.0258 ohm, TO-252 (DPAK), Surface Mount
BSZ900N15NS3GATMA1

Power MOSFET, N-Channel, 150 V, 13 A, 0.074 ohm, TSDSON, Surface Mount
IRLL024NTRPBF

Power MOSFET, N-Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount