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IGT60R190D1SATMA1 Image

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Mfr. #:
IGT60R190D1SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-JFET; CoolGaN?; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Datasheet:
In Stock:
7
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor Type N-JFET
Technology CoolGaN?
Polarization Unipolar
Transistor Type HEMT
Drain-Source Voltage 600V
Drain Current 12.5A
Pulsed Drain Current 23A
Power Consumption 55.5W
Package PG-HSOF-8-3
Gate-Source Voltage -10V
On-State Resistance 190mΩ
Mounting Method SMD
Gate Charge 3.2nC
Packaging Type Reel, Tape
Channel Type Enhancement
Gate Current 7.7mA
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