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IMW120R350M1HXKSA1 Image

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Mfr. #:
IMW120R350M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolSiC?, SiC
Polarization Unipolar
Drain-source voltage 1.2kV
Drain current 4.7A
Pulsed drain current 13A
Power consumption 30W
Package TO247
Gate-source voltage -7...23V
On-state resistance 662mΩ
Mounting method THT
Packaging type Tube
Channel type Enhancement
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