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IMW65R048M1HXKSA1 Image

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Mfr. #:
IMW65R048M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolSiC?, SiC
Polarization Unipolar
Drain-source voltage 650V
Drain current 24A
Pulsed drain current 100A
Power consumption 125W
Package TO247
Gate-source voltage -5...23V
On-state resistance 63mΩ
Mounting method THT
Packaging type Tube
Channel type Enhancement
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