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IMZ120R220M1HXKSA1 Image

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Mfr. #:
IMZ120R220M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolSiC?, SiC
Polarization Unipolar
Drain-source voltage 1.2kV
Drain current 9.5A
Pulsed drain current 21A
Power consumption 37.5W
Package TO247-4
Gate-source voltage -7...23V
On-state resistance 416mΩ
Mounting method THT
Packaging type Tube
Channel type Enhancement
Semiconductor device characteristics Four-terminal
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