LOGO
LOGO
IDH10G65C5 Image

img for reference only

Mfr. #:
IDH10G65C5
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Diode: Schottky rectifier; SiC; THT; 650V; 10A; 89W; PG-TO220-2; tube; Ufmax: 1.8V
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Diode type Schottky rectifier
Technology CoolSiC? 5G, SiC
Mounting method THT
Maximum voltage in off state 650V
Load current 10A
Power consumption 89W
Semiconductor structure Single diode
Package PG-TO220-2
Packaging type Tube
Heat sink thickness 1.17...137mm
Maximum forward pulse current 71A
Maximum forward voltage 1.8V
Leakage current 2μA
Related models
  • IRF7457TRPBF

    Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8

  • IRF7458TRPBF

    Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8

  • IRF7463TRPBF

    Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8

  • IRF7465TRPBF

    Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8

  • IRF7469TRPBF

    Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8

  • IRF7470TRPBF

    Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8

  • IRF7473TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 6.9A; 2.5W; SO8

  • IRF7476TRPBF

    Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd