IRFH7932TR2PBF Infineon | Infineon agency

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Mfr. #：

IRFH7932TR2PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N-channel 30 V 24A (Ta), 104A (Tc) 3.4W (Ta) PQFN (5x6) Single chip pad

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Package	Cut Tape (CT)
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	24 A (Ta), 104 A (Tc)
On-Resistance (max) at Id, Vgs	3.3 mOhm @ 25A, 10V
Vgs(th) (max) at Id	2.35 V @ 100 μA
Gate Charge (Qg) (max) at Vgs	51 nC @ 4.5 V
Input Capacitance (Ciss) (max) at Vds	4270 pF @ 15 V
FET Function	-
Power dissipation (max)	3.4W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount type
Supplier device package	PQFN (5x6) Single chip pad
Package/case	8-PowerVDFN

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