IPP80N04S306AKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPP80N04S306AKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Tongkou N channel 40 V 80A (TC) 100W (TC) PG-TO220-3-1

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	5.7 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	4 V @ 52 μA
Gate Charge?(Qg) (max) at Vgs	47 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	3250 pF @ 25 V
FET Function	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package/Case	TO-220-3

IPDQ60R022S7XTMA1

Infineon N-channel MOSFET, Vds=600 V, 24 A, PG-HDSOP-22-1, SMD, SMD mounting
IPAN60R180P7SXKSA1

Infineon MOSFET, 18 A, PG-TO220, Through Hole, 3-pin
IRFHM9331TRPBF

Infineon P-channel enhancement mode MOS tube, Vds=30 V, 11 A, PQFN, SMD mount, 8 pins, IRFHM9331TRPBF
IRF1104PBF

Infineon N-channel MOS tube, Vds=40 V, 100 A, TO-220AB, through-hole mounting, IRF1104PBF
IPF017N08NF2SATMA1

Infineon N-channel MOSFET, Vds=80 V, 259 A, PG-TO263-7, SMD mount
IRF7854TRPBF

Infineon N-channel MOS tube, Vds=80 V, 10 A, SO-8, through-hole mounting, IRF7854TRPBF
BSZ900N20NS3GATMA1

Infineon N-channel MOS tube, Vds=200 V, 15.2 A, PG-TSDSON-8, SMD installation
IPP013N04NF2SAKMA1

Infineon N-channel enhancement mode MOS tube, Vds=40 V, 197 A, TO-220, SMD mount, 3 pins